, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mtp3n60 MTP3N60FI n- channel enhancement mode power mos transistor type mtp3n60 MTP3N60FI vdss 600 v 600 v rds(on) < 2.5q < 2.5 q. id 3.9 a 2.5 a typical rds(on) = 2n avalanche rugged technology 100% avalanche tested repetitive avalanche data at 100qc application oriented characterization applications . high current, high speed switching . switch mode power supplies (smps) . chopper regulators, converters, motor control, lighting for industrial and consumer environment to-220 isowatt220 internal schematic diagram d (2) ft (1) s(3) absolute maximum ratings symbol vds vdgr vgs id id !dm(?) plot viso tstg tj parameter drain-source voltage (vgs = 0) drain- gate voltage (res = 20 ki) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor insulation withstand voltage (dc) storage temperature max. operating junction temperature value mtp3n60 MTP3N60FI 600 600 20 3.9 2.4 14 100 0.8 ? 2.5 1.5 14 35 0.28 2000 -65 to 150 150 unit v v v a a a w w/c v c c (?) pulse width limited by safe operating area nj semi-conductors reservesthe right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mtp3n60/fi thermal data rthj-case rthj-amb im he- sink ti thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose to-220 1.25 isowatt220 3.57 62.5 0.5 300 c/w c/w c/w c avalanche characteristics symbol iar eas ear iar parameter avalanche current, repetitive or not-repetitive (pulse width limited by tj max, 5 < 1%) single pulse avalanche energy (starting tj = 25 c, id = iar, vdd = 25 v) repetitive avalanche energy (pulse width limited by tj max, 8 < 1%) avalanche current, repetitive or not-repetitive (tc = 100 c, pulse width limited by t, max, 5 < 1%) max value 3.9 300 7.7 2.4 unit a mj mj a electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs = 0) gate-body leakage current (vds = 0) test conditions !d = 250|aa vgs=0 vds = max rating vds = max rating x 0.8 tc=125c vgs = + 20 v min. 600 typ, max. 25 250 100 unit v ha ha na on(* symbol vgs(th) rds(on) ld(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs id = 1ma vgs = 10v id= 1.5 a vds > b(on) x rds(on)max vqs= 10 v min. 2 3.9 typ. 3 2 max. 4.5 2.5 unit v n a dynamic symbol 9fs (*) ciss coss crss parameter forward transconductance input capacitance output capacitance reverse transfer capacitance test conditions vds > id(oh) x ros(on)max id = 1.5 a vds= 25 v f = 1 mhz vgs= 0 min. 1.5 i typ- 2.6 560 90 40 max. 800 130 55 unit s pf pf pf
mtp3n60/fi electrical characteristics (continued) switching on symbol td(on) tr (di/dt)on qg qgs qgd parameter turn-on time rise time turn-on current slope total gate charge gate-source charge gate-drain charge test conditions vdd=225v id = 2. 5 a rg = 15 q vgs = 10 v (see test circuit, figure 3) vdd = 480v id = 4a rg= 15 n vgs = 10 v (see test circuit, figure 5) vdd = 480 v id = 4 a vgs- 10v win. typ. 45 33 200 43 6 21 max. 60 42 55 unit ns ns a/(js nc nc nc switching off symbol tr(voff) tf te parameter off-voltage rise time fall time cross-over time test conditions vdd = 480v id = 4 a rg= 15 q vgs = 10 v (see test circuit, figure 5) min. typ. 35 40 60 rmax. 45 55 75 unit ns ns ns source drain diode symbol isd isdm(') vsd(*) trr qrr irrm parameter source-drain current source-drain current (pulsed) forward on voltage reverse recovery time reverse recovery charge reverse recovery current test conditions isd = 3.9 a vgs = 0 isd = 4a di/dt = 100 a/us vdd = 100 v tj = 150c (see test circuit, figure 5) min. typ. 420 3.7 18 max. 3.9 14 2 unit a a v ns uc a (*) pulsed: pulse duration = 300 us, duty cycle 1.5 % (?) pulse width limited by safe operating area safe operating areas for to-220 safe operating areas for isowatt220 10 10" 10 f~ ^ j 0' ' -|? || ^ ^ rj j ^ c ' i d.c, c'l i . 2 1 10 "v -\ 1 fc^ __j s h ? ? . 1 ^ , iration1 ^ li.. ' qu. i 1ms oms 100ms b 1 . 2 4(1,2 4 10* 1ds v., , \p m 4 10'. 9 4 ?", fi 4 2 a 4 z io'7 i ^~ 1 ^ :it= ation s, j- 1 3, ^; ? 2 4?,2 488,1 4 d 10( 10* r 100/ 1ms blom 1dor ?1? ii is s ns s 11.2 4(1 1ds vk (v)
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